Detectors we produce are the semiconductor photodiodes (PDs). PD heterostructure is formed by sequential epitaxy of semiconductor layers on the surface of a crystal substrate. Light is absorbed in the active layer of PD and the spectral response of the PD is determined by the energy gap of the material in the active layer.
Currently we offer photodiodes with cut-off at 2.4, 3.6 and 4.3 µm with sensitive area 0.3, 0.5 and 1mm.
We offer a range of standard packages for PDs as follows:
✔TO18 – appropriate for mounting photodiodes and photodiodes arrays and matrices without thermocooler.
✔TO5 (TO39) – appropriate for mounting photodiode arrays, 1-element photodiodes and arrays with thermocooler.
✔TO8 – appropriate for mounting photodiode arrays, 1-element photodiodes and arrays with thermocooler.